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Automotive-grade Silicon Carbide diodes - STMicroelectronics

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Silicon Carbide (SiC) MOSFETs offer superior dynamic and thermal performance over conventional Silicon (Si) power MOSFETs. Next Generation SiC MOSFET Features

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RSF015N06 datasheet,Page:1, Data Sheet 4V Drive Nch MOSFET RSF015N06  Structure Silicon N-channel MOSFET  Dimensions (Unit : mm) TUMT3

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MOSFET - STMicroelectronics

2017323-Cree Releases SPICE Model for Silicon Carbide Power MOSFETFEBRUARY 6, 2012 Behavior-based model enables power electronic design engineers to

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Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(

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N-channel MOSFET, 10 A, 1500 V, 3-Pin SC-65 | RS Components

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650V HB2 series - High speed (16 to 60 kHz) - ST

Wide Bandgap Transistors (17) SiC MOSFETs (17) FILTERS Reset FiltersShow 1 product Part NumberClear PackageClear GradeClear VCES (V)Clear maxClear

Si8261BCC-C-IP | Silicon Labs Si8261BCC-C-IP MOSFET

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Nch (SiC) MOSFET_SCT3080AL_(ROHM

Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC) MOSFETs feature very low RDS(

C2M1000170J | C2M1000170J SiC N-Channel MOSFET, 5.3 A, 1700 V

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AV02-4498EN_WP_SiC-MOSFET_2014-05-06 - edu.docin.com

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SiC MOSFETs - STMicroelectronics

Based on the advanced and innovative properties of wide bandgap materials, STs 650 V and 1200 V silicon carbide (SiC)

Silicon Carbide (SiC) Semiconductor | Microsemi

Silicon Carbide (SiC) semiconductors, solutions to improve efficiency, smaller form factor and higher operating temperature in industrial and aerospace

MOSFETIGBT - STMicroelectronics

ST’s portfolio of silicon carbide MOSFETs features the industry’s highest operating junction temperature rating of 200 °C and significantly reduced total

MOSFET Transistors - online | RS Components

The best MOSFET Transistors products and stock availability in the business, available online, on the phone or by fax from RS Components. Magnetisers

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